ABSTRACT The current-voltage characteristics of microelectronic devices are used to compare commercial components. A double exponential model (VDEM) introduces physical parameters to characterise the junction properties of bipolar transistor. The method leads to differentiate the high and low power operating modes of devices and shows that values of the junction parameters can be associated with each manufacture and related to quality and reliability control.
W., T., & P., M. (2008). RELIABILITY OF MICROELECTRONIC DEVICES FROM EMITTERBASE JUNCTION CHARACTERIZATION. The International Conference on Applied Mechanics and Mechanical Engineering, 13(13th International Conference on Applied Mechanics and Mechanical Engineering.), 29-37. doi: 10.21608/amme.2008.39820
MLA
TAZBIT W.; MIALHE P.. "RELIABILITY OF MICROELECTRONIC DEVICES FROM EMITTERBASE JUNCTION CHARACTERIZATION", The International Conference on Applied Mechanics and Mechanical Engineering, 13, 13th International Conference on Applied Mechanics and Mechanical Engineering., 2008, 29-37. doi: 10.21608/amme.2008.39820
HARVARD
W., T., P., M. (2008). 'RELIABILITY OF MICROELECTRONIC DEVICES FROM EMITTERBASE JUNCTION CHARACTERIZATION', The International Conference on Applied Mechanics and Mechanical Engineering, 13(13th International Conference on Applied Mechanics and Mechanical Engineering.), pp. 29-37. doi: 10.21608/amme.2008.39820
VANCOUVER
W., T., P., M. RELIABILITY OF MICROELECTRONIC DEVICES FROM EMITTERBASE JUNCTION CHARACTERIZATION. The International Conference on Applied Mechanics and Mechanical Engineering, 2008; 13(13th International Conference on Applied Mechanics and Mechanical Engineering.): 29-37. doi: 10.21608/amme.2008.39820
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